Prof Marty Gregg, Queen’s University Belfast, UK

Towards Ephemeral Nanoelectronics: Understanding and Creating Domain Wall Circuitry
When Oct 08, 2018
from 02:00 PM to 03:00 PM
Where Department of Materials, Hume-Rothery Building Lecture Room, 1st Floor 179.10.11
Contact Name
Contact Phone 01865-273030
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Over the last ten years or so, it has become evident that domain walls in ferroelectric and mutiferroic oxides can have functionality that is completely different from the bulk. Of particular note are systems in which the bulk of the material is insulating, while the domain walls conduct. The fact that domain walls can be moved, created and destroyed immediately prompts the notion that conducting walls could be used as dynamic connectors in new kinds of agile nano circuits. Recently this paradigm has developed further, as it has become clear that conducting domain walls can support both p and n-type semiconducting behaviour and that intersections between domain walls could act as 1D p-n junctions, which themselves can be moved, formed and annihilated, such that devices AND interconnects could be ephemeral in nature. The prospect of creating, destroying and changing entire nano circuits using domain walls is obviously tantalising.

In this talk, I’ll attempt to summarise progress that has been made to date in the investigation of conducting domain walls and the manner in which their position and motion can be controlled in small scale devices.